Datasheet > STP45N60DM2AG

STP45N60DM2AG

更新时间： 2024-11-24 14:58:03

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描述
汽车级N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET，TO-220封装

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技术参数
数据手册

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STP45N60DM2AG 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	17 weeks
风险等级：	2.12	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STP45N60DM2AG 数据手册

STP45N60DM2AG

Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A

MDmesh™ DM2 Power MOSFET in a TO-220 package

Datasheet - production data

Features

V_DS

T_Jmax.

R_DS(on)

max.

Order code

I_D

P_TOT

STP45N60DM2AG

650 V

0.093 Ω

34 A 250 W

•

Designed for automotive applications and

AEC-Q101 qualified

•

Fast-recovery body diode

Extremely low gate charge and input

capacitance

•

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications

•

Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP45N60DM2AG

45N60DM2

TO-220

Tube

July 2015

DocID028065 Rev 1

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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