Datasheet > STP4953S8TG

STP4953S8TG

更新时间： 2024-11-23 06:14:51

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
8页	718K
描述
Dual P Channel Enhancement Mode MOSFET

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STP4953S8TG 数据手册

STP4953

Dual P Channel Enhancement Mode MOSFET

5.2A

DESCRIPTION

STP4953 is the dual P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as LCD backlight, notebook

computer power management, and other battery powered circuits.

FEATURE

PIN CONFIGURATION

SOP-8

�

-30V/-5.2A, R_DS(ON)= 60mΩ

@VGS =-10V

-30V/-4.5A, R_DS(ON)= 80mΩ

@VGS = -6.0V

-30V/-3.8A, R_DS(ON)= 90mΩ

@VGS = -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

SOP-8

ORDERING INFORMATION

Part Number

Package

SOP-8

Part Marking

STP4953

STP4953S8RG

STP4953S8TG

SOP-8

STP4953

※ Process Code : A ~ Z ; a ~ z

※ STP4953S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free

※ STP4953S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4953 2007. V1

12 3 4 5 6 7 8

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