Datasheet > STP4N150_06

STP4N150_06

更新时间： 2024-11-06 04:01:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	366K
描述
N-channel 1500V - 5ヘ - 4A - TO-220/TO-247 Very high PowerMESH⑩ Power MOSFET

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中文翻译

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STP4N150_06 数据手册

STP4N150

STW4N150

N-channel 1500V - 5Ω - 4A - TO-220/TO-247

Very high PowerMESH™ Power MOSFET

General features

V_DSS

Type

R_DS(on)

I_D

(@Tjmax)

STP4N150

STW4N150

1500 V

< 7 Ω

■ Avalanche ruggedness

■ Gate charge minimized

TO-220

TO-247

■ Very low intrinsic capacitances

■ High speed switching

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STP4N150

STW4N150

P4N150

W4N150

TO-220

TO-247

Tube

August 2006

Rev 4

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

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