Datasheet > STP4N90K5

STP4N90K5

更新时间： 2024-11-27 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	725K
描述
N沟道900 V、1.90 Ohm典型值、3 A MDmesh K5功率MOSFET，TO-220封装

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STP4N90K5 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	17 weeks	风险等级：	2.09
Base Number Matches：	1

STP4N90K5 数据手册

STP4N90K5

N-channel 900 V, 1.90 Ω typ.,3 A MDmesh™ K5

Power MOSFET in a TO-220 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STP4N90K5

900 V

2.10 Ω

3 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

TO-220

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STP4N90K5

4N90K5

TO-220

Tube

November 2016

DocID029953 Rev 1

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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