STP4NB50

更新时间： 2024-02-20 09:10:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	165K
描述
N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh⑩ MOSFET

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STP4NB50 数据手册

STP4NB50

STP4NB50FP

N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP

PowerMesh™ MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STP4NB50

STP4NB50FP

500 V

< 2.8 Ω

3.8 A

2.5 A

■

TYPICAL R (on) = 2.5 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

TO-220

TO-220FP

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STP4NB50FP

Unit

STP4NB50

Drain-source Voltage (V = 0)

500

±30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

3.8

2.4

2.5

1.6

Drain Current (continuous) at T = 100°C

( )

Drain Current (pulsed)

15.2

Total Dissipation at T = 25°C

TOT

Derating Factor

0.64

0.28

W/°C

V/ns

dv/dt

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

4.5

ISO

2500

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

April 2003

(1)I ≤4 A, di/dt ≤200A/µs, V ≤ V

, T ≤ T

j JMAX

(BR)DSS

1/7

12 3 4 5 6 7

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