Datasheet > STP46N60M6

STP46N60M6

更新时间： 2024-11-27 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	456K
描述
N沟道600 V、68 mOhm典型值、36 A MDmesh M6功率MOSFET，TO-220封装

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技术参数
数据手册

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STP46N60M6 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	16 weeks	风险等级：	5.69
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP46N60M6 数据手册

STP46N60M6

Datasheet

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6

Power MOSFET in a TO‑220 package

Features

DS(on)

max.

Order code

TAB

STP46N60M6

600 V

80 mΩ

36 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

LLC converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STP46N60M6

Product summary

Order code

Marking

STP46N60M6

46N60M6

TO-220

Package

Packing

Tube

DS12394 - Rev 3 - November 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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