品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
20页 | 996K | |
描述 | ||
N沟道300 V、0.063 Ohm典型值、42 A STripFET(TM) II功率MOSFET,TO-220封装 |
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 12 weeks |
风险等级: | 1.71 | 雪崩能效等级(Eas): | 290 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (Abs) (ID): | 42 A |
最大漏极电流 (ID): | 42 A | 最大漏源导通电阻: | 0.075 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 168 A |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP47 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-220AB | |
STP48 | ETC |
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TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-220AB | |
STP4803 | STANSON |
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STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which i | |
STP-48AMP10 | POWERVOLT |
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The Power Supply for Stepping Motors | |
STP-48AMP5 | POWERVOLT |
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The Power Supply for Stepping Motors | |
STP49 | ETC |
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TRANSISTOR | BJT | NPN | 350V V(BR)CEO | TO-220AB | |
STP4925 | STANSON |
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STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which i | |
STP4925A | UMW |
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种类:P+P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25 | |
STP4931 | STANSON |
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STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are pr | |
STP4953 | STANSON |
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Dual P Channel Enhancement Mode MOSFET |