Datasheet > STP4925

STP4925

更新时间： 2024-11-23 11:58:51

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	577K
描述
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP4925 数据手册

STP4925

P Dual Channel Enhancement Mode

MOSFET

7.2A

ꢀ

DESCRIPTION

STP4925 is the dual PꢀChannel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize onꢀstate resistance. These devices are

particularly suited for low voltage application such as LCD backlight, notebook

computer power management, and other battery powered circuits.

FEATURE

PIN CONFIGURATION

SOP-8

ꢀ

ꢀ30V/ꢀ7.2A, R_DS(ON)= 20mꢁ (Typ.)

@VGS =ꢀ10V

ꢀ30V/ꢀ5.6A, R_DS(ON)= 25mꢁ

@V^GS= ꢀ4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and maximum

DC current capability

SOPꢀ8 package design

PART MARKING

SOP-8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4925 2007. V1

12 3 4 5 6

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