Datasheet > STP45NEO6

STP45NEO6

更新时间： 2024-11-04 23:35:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	92K
描述
N-CHANNEL 60V - 0.022 OMH - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET

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STP45NEO6 数据手册

STP45NE06

STP45NE06FP

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP

STripFET POWER MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STP45NE06

STP45NE06FP

60 V

< 0.028 Ω

45 A

25 A

■

TYPICAL R_DS(on)= 0.022 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 ^oC

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

TO-220

TO-220FP

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP45NE06 STP45NE06FP

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 20

Drain Current (continuous) at T_c= 25 C

17.5

180

I_D

Drain Current (continuous) at T_c= 100 C

I_DM(•)

P_tot

Drain Current (pulsed)

180

100

0.67

Total Dissipation at T_c= 25 C

W/^oC

Derating Factor

0.23

2000

V_ISO

dv/dt

T_stg

T_j

Insulation Withstand Voltage (DC)

Peak Diode Recovery voltage slope

Storage Temperature

V/ns

^oC

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(1) I_SD≤ 20 A, di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/6

June 1998

12 3 4 5 6

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