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STP45NF06L PDF预览

STP45NF06L

更新时间: 2024-09-14 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 443K
描述
N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET⑩ II POWER MOSFET

STP45NF06L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):135 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):80 W最大脉冲漏极电流 (IDM):152 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP45NF06L 数据手册

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STP45NF06L  
STB45NF06L  
2
N-CHANNEL 60V - 0.022- 38A TO-220 / D PAK  
STripFET™ II POWER MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP45NF06L  
STB45NF06L  
60 V  
60 V  
< 0.028Ω  
< 0.028Ω  
38 A  
38 A  
TYPICAL R (on) = 0.022Ω  
EXCEPTIONAL dv/dt CAPABILITY  
LOGIC LEVEL GATE DRIVE  
DS  
3
3
1
2
1
DESCRIPTION  
2
This Power Mosfet is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalance characteris-  
tics and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
D PAK  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH-EFFICIENCY DC-DC CONVERTERS  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 k)  
60  
DGR  
GS  
V
Gate- source Voltage  
±16  
38  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
26  
A
D
C
I
( )  
Drain Current (pulsed)  
152  
80  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.53  
7
W/°C  
V/ns  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(1) I 38A, di/dt 300A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  
() Pulse width limited by safe operating area  
September 2002  
1/10  

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