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STP45N60DM6 PDF预览

STP45N60DM6

更新时间: 2024-11-06 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 323K
描述
N沟道600 V、0.085 Ohm典型值、30 A MDmesh DM6功率MOSFET,TO-220封装

STP45N60DM6 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:2.27
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STP45N60DM6 数据手册

 浏览型号STP45N60DM6的Datasheet PDF文件第2页浏览型号STP45N60DM6的Datasheet PDF文件第3页浏览型号STP45N60DM6的Datasheet PDF文件第4页浏览型号STP45N60DM6的Datasheet PDF文件第5页浏览型号STP45N60DM6的Datasheet PDF文件第6页浏览型号STP45N60DM6的Datasheet PDF文件第7页 
STP45N60DM6, STW45N60DM6  
Datasheet  
N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220  
and TO-247 packages  
Features  
TAB  
V
R
max.  
I
D
Order code  
STP45N60DM6  
STW45N60DM6  
DS  
DS(on)  
600 V  
0.099 Ω  
30 A  
3
3
2
2
1
1
Fast-recovery body diode  
TO-247  
TO-220  
Lower RDS(on) per area vs previous generation  
Low gate charge, input capacitance and resistance  
100% avalanche tested  
D(2, TAB)  
Extremely high dv/dt ruggedness  
Zener-protected  
G(1)  
Applications  
S(3)  
AM01476v1_tab  
Switching applications  
Description  
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-  
recovery diode series. Compared with the previous MDmesh fast generation, DM6  
combines very low recovery charge (Qrr), recovery time (trr) and excellent  
improvement in RDS(on) per area with one of the most effective switching behaviors  
available in the market for the most demanding high-efficiency bridge topologies and  
ZVS phase-shift converters.  
Product status links  
STP45N60DM6  
STW45N60DM6  
Product summary  
Order code  
Marking  
STP45N60DM6  
45N60DM6  
TO-220  
Package  
Packing  
Tube  
Order code  
Marking  
STW45N60DM6  
45N60DM6  
TO-247  
Package  
Packing  
Tube  
DS11664 - Rev 3 - July 2020  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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