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STP4403 PDF预览

STP4403

更新时间: 2024-11-01 12:22:55
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 321K
描述
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

STP4403 数据手册

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STP4403  
P Channel Enhancement Mode MOSFET  
10.0A  
-
DESCRIPTION  
STP4403 is the P-Channel logic enhancement mode power field effect transistors are  
produced using high cell density, DMOS trench technology. This high density process  
is especially tailored to minimize on-state resistance. These devices are particularly  
suited for low voltage application, such as cellular phone and notebook computer  
power management and other battery powered circuits, and low in-line power loss are  
needed in a very small outline surface mount package.  
FEATURE  
PIN CONFIGURATION  
SOP-8  
-20V/-10.0A, RDS(ON) = 20mΩ  
@VGS = -4.5V  
-20V/-8.6A, RDS(ON) = 25mΩ  
@VGS = -2.5V  
-20V/-7.6A, RDS(ON) = 35mΩ  
@VGS = -1.8V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum DC  
current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
Y:Year Code  
A:Process Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STP4403 2010. V1  

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