Datasheet > STP4403

STP4403

更新时间： 2024-11-26 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	321K
描述
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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STP4403 数据手册

STP4403

P Channel Enhancement Mode MOSFET

10.0A

DESCRIPTION

STP4403 is the P-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, such as cellular phone and notebook computer

power management and other battery powered circuits, and low in-line power loss are

needed in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOP-8

�

-20V/-10.0A, R_DS(ON)= 20mΩ

@VGS = -4.5V

-20V/-8.6A, R_DS(ON)= 25mΩ

@VGS = -2.5V

-20V/-7.6A, R_DS(ON)= 35mΩ

@VGS = -1.8V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum DC

current capability

SOP-8 package design

PART MARKING

SOP-8

Y:Year Code

A:Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4403 2010. V1

12 3 4 5 6

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