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STP4407 PDF预览

STP4407

更新时间: 2024-11-23 12:22:55
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 545K
描述
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

STP4407 数据手册

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STP4407  
P Channel Enhancement Mode MOSFET  
12A  
-
DESCRIPTION  
The STP4407 is the P-Channel logic enhancement mode power field effect transistor  
is produced using high cell density, DMOS trench technology.  
This high density process is especially tailored to minimize on-state resistance.  
These devices are particularly suited for low voltage application such as cellular  
phone and notebook computer power management and other batter powered  
circuits where high-side switching.  
FEATURE  
PIN CONFIGURATION  
SOP-8  
-30V/-12A, RDS(ON) = 9mΩ  
@VGS = -20V  
-30V/-12A, RDS(ON) = 10mΩ  
@VGS = -10V  
-30V/-10A, RDS(ON) = 15mΩ  
@VGS = -5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum DC  
current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
1
120 Bentley Square, Mountain View, Ca 94040 USA  
TEL: (650) 9389294 FAX: (650) 9389295  
Copyright © 2007, Stanson Corp.  
STP4407 2009. V1  

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