Datasheet > STP4407

STP4407

更新时间： 2024-11-05 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	545K
描述
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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STP4407 数据手册

STP4407

P Channel Enhancement Mode MOSFET

12A

DESCRIPTION

The STP4407 is the P-Channel logic enhancement mode power field effect transistor

is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular

phone and notebook computer power management and other batter powered

circuits where high-side switching.

FEATURE

PIN CONFIGURATION

SOP-8

�

-30V/-12A, R_DS(ON)= 9mΩ

@VGS = -20V

-30V/-12A, R_DS(ON)= 10mΩ

@VGS = -10V

-30V/-10A, R_DS(ON)= 15mΩ

@VGS = -5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum DC

current capability

SOP-8 package design

PART MARKING

SOP-8

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

STP4407 2009. V1

12 3 4 5 6

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