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STP4435A PDF预览

STP4435A

更新时间: 2024-11-26 11:58:51
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 311K
描述
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STP4435A 数据手册

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STP4435A  
P Channel Enhancement Mode MOSFET  
10A  
-
DESCRIPTION  
STP4435A is the P-Channel logic enhancement mode power field effect transistor  
which is produced using high cell density, DMOS trench technology. This high density  
process is especially tailored to minimize on-state resistance. These devices are  
particularly suited for low voltage application such as LCD backlight, notebook  
computer power management, and other battery powered circuits.  
FEATURE  
PIN CONFIGURATION  
SOP-8  
z
z
z
z
z
-30V/-9.2A, RDS(ON) = 22mΩ (Typ.)  
@VGS =-10V  
-30V/-7.0A, RDS(ON) = 30mΩ  
@VGS = -4.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum  
DC current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STP4435A 2007. V1  

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