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STP45N10 PDF预览

STP45N10

更新时间: 2024-10-31 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
10页 435K
描述
N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR

STP45N10 数据手册

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STP45N10  
STP45N10FI  
®
N - CHANNEL 100V - 0.027- 45A - TO-220/TO-220FI  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STP45N10  
STP45N10FI  
100 V  
100 V  
< 0.035 Ω  
< 0.035 Ω  
45 A  
24 A  
TYPICAL RDS(on) = 0.027 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
HIGH CURRENT CAPABILITY  
175 oC OPERATING TEMPERATURE  
APPLICATION ORIENTED  
3
3
2
2
1
1
TO-220  
ISOWATT220  
CHARACTERIZATION  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMP DRIVERS. Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP45N10FI  
Unit  
STP45N10  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
100  
100  
± 25  
V
V
V
o
Drain Current (continuous) at Tc = 25 C  
45  
32  
24  
17  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
I
DM()  
Drain Current (pulsed)  
180  
150  
1
180  
45  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.3  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
1/10  
June 1998  

STP45N10 替代型号

型号 品牌 替代类型 描述 数据表
RFP40N10 FAIRCHILD

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40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

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