Datasheet > STP45N40DM2AG

STP45N40DM2AG

更新时间： 2024-11-27 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	738K
描述
汽车级N沟道400 V、0.063 Ohm典型值、38 A MDmesh DM2功率MOSFET，TO-220封装

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STP45N40DM2AG 数据手册

STP45N40DM2AG

Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A

MDmesh™ DM2 Power MOSFET in a TO-220 package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

250 W

STP45N40DM2AG 400 V 0.072 Ω

38 A



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode

Extremely low gate charge and input

capacitance



Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

Figure 1: Internal schematic diagram

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Q_rr)

and time (t_rr) combined with low R_DS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP45N40DM2AG

45N40DM2

TO-220

Tube

August 2016

DocID028082 Rev 3

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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