Datasheet > STP4435

STP4435

更新时间： 2024-11-02 17:15:43

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STP4435 数据手册

STP4435

P Channel Enhancement Mode MOSFET

10A

DESCRIPTION

STP4435 is the P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as LCD backlight, notebook

computer power management, and other battery powered circuits.

FEATURE

PIN CONFIGURATION

SOP-8

-30V/-9.2A, R_DS(ON)=-22mΩ (Typ.)

@VGS =-10V

-30V/-7.0A, R_DS(ON)= 30mΩ

@VGS = -4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOP-8 package design

PART MARKING

SOP-8

：

Y Year Code

：

A Preduce Code

：

B Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4435 2007.

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
STP4435A	STANSON	获取价格	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is pr
STP45N05L	STMICROELECTRONICS	获取价格	45A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
STP45N05LFI	STMICROELECTRONICS	获取价格	24A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
STP45N10	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR
STP45N10F7	STMICROELECTRONICS	获取价格	N沟道100 V、0.013 Ohm典型值、45 A STripFET F7功率MOSFE
STP45N10FI	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR
STP45N40DM2AG	STMICROELECTRONICS	获取价格	汽车级N沟道400 V、0.063 Ohm典型值、38 A MDmesh DM2功率MOS
STP45N60DM2AG	STMICROELECTRONICS	获取价格	汽车级N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOS
STP45N60DM6	STMICROELECTRONICS	获取价格	N沟道600 V、0.085 Ohm典型值、30 A MDmesh DM6功率MOSFET
STP45N65M5	STMICROELECTRONICS	获取价格	N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 pac