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STP42N65M5 PDF预览

STP42N65M5

更新时间: 2024-11-23 12:33:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 1101K
描述
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

STP42N65M5 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:17 weeks
风险等级:2.26雪崩能效等级(Eas):950 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (Abs) (ID):33 A最大漏极电流 (ID):33 A
最大漏源导通电阻:0.079 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):132 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP42N65M5 数据手册

 浏览型号STP42N65M5的Datasheet PDF文件第2页浏览型号STP42N65M5的Datasheet PDF文件第3页浏览型号STP42N65M5的Datasheet PDF文件第4页浏览型号STP42N65M5的Datasheet PDF文件第5页浏览型号STP42N65M5的Datasheet PDF文件第6页浏览型号STP42N65M5的Datasheet PDF文件第7页 
STx42N65M5  
N-channel 650 V, 0.070 , 33 A MDmesh™ V Power MOSFET  
in I2PAK, TO-220, TO-220FP, D2PAK and TO-247  
Features  
VDSS  
TJmax  
@
RDS(on)  
max  
Type  
ID  
3
3
3
2
1
STB42N65M5  
STF42N65M5  
STI42N65M5  
STP42N65M5  
STW42N65M5  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.079 Ω  
33 A  
2
1
1
< 0.079 33 A (1)  
TO-220  
D²PAK  
TO-220FP  
< 0.079 Ω  
< 0.079 Ω  
< 0.079 Ω  
33 A  
33 A  
33 A  
1. Limited only by maximum temperature allowed  
3
3
2
2
1
1
TO-220 worldwide best R  
DS(on)  
I²PAK  
TO-247  
Higher V  
rating  
DSS  
High dv/dt capability  
Excellent switching performance  
Easy to drive  
Figure 1.  
Internal schematic diagram  
100% avalanche tested  
$ꢅꢆꢇ  
Application  
Switching applications  
'ꢅꢁꢇ  
Description  
MDmesh™ V is a revolutionary Power MOSFET  
technology based on an innovative proprietary  
vertical process, which is combined with  
STMicroelectronics’ well-known PowerMESH™  
horizontal layout structure. The resulting product  
has extremely low on-resistance, which is  
unmatched among silicon-based Power  
MOSFETs, making it especially suitable for  
applications which require superior power density  
and outstanding efficiencies.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB42N65M5  
STF42N65M5  
STI42N65M5  
STP42N65M5  
STW42N65M5  
42N65M5  
42N65M5  
42N65M5  
42N65M5  
42N65M5  
Tape and reel  
Tube  
TO-220FP  
PAK  
Tube  
TO-220  
TO-247  
Tube  
Tube  
June 2009  
Doc ID 15317 Rev 3  
1/18  
www.st.com  
18  

STP42N65M5 替代型号

型号 品牌 替代类型 描述 数据表
STW42N65M5 STMICROELECTRONICS

完全替代

N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V P
STB42N65M5 STMICROELECTRONICS

完全替代

N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V P

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