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STP434S PDF预览

STP434S

更新时间: 2024-11-01 06:14:51
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 232K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

STP434S 数据手册

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STB/P434S  
Ver 1.0  
a
S mHop Microelectronics Corp.  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for low RDS(ON).  
RDS(ON) (m) Max  
VDSS  
ID  
Rugged and reliable.  
9.2 @ VGS=10V  
TO-220 and TO-263 Package.  
60A  
40V  
11.5 @ VGS=4.5V  
D
G
STB SERIES  
TO-263(DD-PAK)  
STP SERIES  
TO-220  
S
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted  
)
(
Symbol  
VDS  
Parameter  
Units  
Limit  
40  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
20  
60  
°
TC=25 C  
A
a
ID  
Drain Current-Continuous  
°
TC=70 C  
48  
A
b
IDM  
A
176  
91  
-Pulsed  
d
EAS  
mJ  
Sigle Pulse Avalanche Energy  
°
TC=25 C  
62.5  
40  
W
W
a
PD  
Maximum Power Dissipation  
°
TC=70 C  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
a
R
2
Thermal Resistance, Junction-to-Case  
°C/W  
°C/W  
JC  
JA  
a
R
62.5  
Thermal Resistance, Junction-to-Ambient  
Details are subject to change without notice.  
Nov,14,2008  
www.samhop.com.tw  
1

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