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STP432S PDF预览

STP432S

更新时间: 2024-11-01 12:48:15
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 241K
描述
N-Channel Logic Enhancement Mode Field Effect Transistor

STP432S 数据手册

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STB/P432S  
Ver 1.0  
a
S mHop Microelectronics Corp.  
N-Channel Logic Enhancement Mode Field Effect Transistor  
FEATURES  
PRODUCT SUMMARY  
Super high dense cell design for extremely low RDS(ON).  
High power and current handling capability.  
TO-220 & TO-263 package.  
RDS(ON) (m) Max  
VDSS  
ID  
9 @ VGS=10V  
60A  
40V  
11 @ VGS=4.5V  
S TB S E R IE S  
TO-263(DD-PAK)  
S TP S E R IE S  
TO-220  
°
ABSOLUTE MAXIMUM RATINGS TC=25 C unless otherwise noted  
)
(
Symbol  
VDS  
Parameter  
Units  
Limit  
40  
Drain-Source Voltage  
V
V
VGS  
Gate-Source Voltage  
Drain Current-Continuousa  
20  
ID  
°
TC=25 C  
A
A
60  
b
IDM  
EAS  
PD  
240  
130  
62.5  
-Pulsed  
Sigle Pulse Avalanche Energy d  
Maximum Power Dissipation a  
mJ  
W
°
TC=25 C  
Operating Junction and Storage  
Temperature Range  
°C  
TJ, TSTG  
-55 to 150  
THERMAL CHARACTERISTICS  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
2
°C/W  
°C/W  
JC  
JA  
50  
Details are subject to change without notice.  
Jun,24,2008  
www.samhop.com.tw  
1

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