5秒后页面跳转
SIA437DJ PDF预览

SIA437DJ

更新时间: 2024-09-16 12:31:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 217K
描述
P-Channel 20 V (D-S) MOSFET

SIA437DJ 数据手册

 浏览型号SIA437DJ的Datasheet PDF文件第2页浏览型号SIA437DJ的Datasheet PDF文件第3页浏览型号SIA437DJ的Datasheet PDF文件第4页浏览型号SIA437DJ的Datasheet PDF文件第5页浏览型号SIA437DJ的Datasheet PDF文件第6页浏览型号SIA437DJ的Datasheet PDF文件第7页 
New Product  
SiA437DJ  
Vishay Siliconix  
www.vishay.com  
P-Channel 20 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
• TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) () (Max.)  
ID (A)a  
- 29.7  
- 25  
Qg (Typ.)  
• Thermally Enhanced PowerPAK® SC-70 Package  
- Small Footprint Area  
- Low On-Resistance  
• 100 % Rg Tested  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
0.0145 at VGS = - 4.5 V  
0.0205 at VGS = - 2.5 V  
0.0330 at VGS = - 1.8 V  
0.0650 at VGS = - 1.5 V  
- 20  
28 nC  
- 19.7  
- 4  
APPLICATIONS  
• Providing low voltage drop in Smart Phones, Tablet PCs,  
Mobile Computing:  
PowerPAK SC-70-6L-Single  
1
- Battery Switches  
- Load Switches  
- Power Management  
S
D
2
D
3
G
D
6
S
D
Marking Code  
5
2.05 mm  
S
2.05 mm  
G
4
B U X  
Part # code  
X X X  
Ordering Information:  
Lot Traceability  
and Date code  
SiA437DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
Parameter  
Symbol  
Limit  
- 20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
8
T
T
C = 25 °C  
C = 70 °C  
- 29.7  
- 23.8  
- 12.6b, c  
- 10b, c  
- 60  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current (t = 300 μs)  
IDM  
IS  
T
C = 25 °C  
- 16  
- 2.9b, c  
Continuous Source-Drain Diode Current  
TA = 25 °C  
T
T
C = 25 °C  
C = 70 °C  
19  
12  
Maximum Power Dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
3.5b, c  
2.2b, c  
- 50 to 150  
260  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 5 s  
28  
36  
°C/W  
Maximum Junction-to-Case (Drain)  
Steady State  
RthJC  
5.3  
6.5  
Notes  
a. TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 80 °C/W.  
S12-2728-Rev. A, 12-Nov-12  
Document Number: 62777  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIA437DJ相关器件

型号 品牌 获取价格 描述 数据表
SiA440DJ VISHAY

获取价格

N-Channel 40 V (D-S) MOSFET
SiA441DJ VISHAY

获取价格

P-Channel 40 V (D-S) MOSFET
SIA443DJ-T1-E3 VISHAY

获取价格

Transistor
SIA443DJ-T1-GE3 VISHAY

获取价格

Trans MOSFET P-CH 20V 6.7A 6-Pin PowerPAK SC-70 T/R
SiA4446DJ VISHAY

获取价格

N-Channel 40 V (D-S) MOSFET
SIA444DJT VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIA444DJT_11 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIA444DJT-T1-GE3 VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiA445EDJ VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SiA445EDJT VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET