5秒后页面跳转
SIA449DJ PDF预览

SIA449DJ

更新时间: 2024-09-16 12:04:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 210K
描述
P-Channel 30 V (D-S) MOSFET

SIA449DJ 数据手册

 浏览型号SIA449DJ的Datasheet PDF文件第2页浏览型号SIA449DJ的Datasheet PDF文件第3页浏览型号SIA449DJ的Datasheet PDF文件第4页浏览型号SIA449DJ的Datasheet PDF文件第5页浏览型号SIA449DJ的Datasheet PDF文件第6页浏览型号SIA449DJ的Datasheet PDF文件第7页 
SiA449DJ  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
Thermally Enhanced PowerPAK® SC-70 Package  
- Small Footprint Area  
VDS (V)  
RDS(on) () (Max.)  
0.020 at VGS = - 10 V  
0.024 at VGS = - 4.5 V  
0.038 at VGS = - 2.5 V  
ID (A)  
- 12a  
- 12a  
- 12a  
Qg (Typ.)  
- Low On-Resistance  
100 % Rg Tested  
Material categorization:  
- 30  
23.1 nC  
For definitions of compliance please see  
www.vishay.com/doc?99912  
PowerPAK SC-70-6L-Single  
APPLICATIONS  
Providing low voltage drop in  
Smart Phones, Tablet PCs,  
Mobile Computing:  
1
D
S
2
D
3
- Power Management  
- Charger Switches  
G
D
6
G
- Load Switches  
- DC/DC Converters  
S
D
5
2.05 mm  
S
2.05 mm  
4
Marking Code  
BWX  
Ordering Information:  
SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
Part # code  
X X X  
D
Lot Traceability  
and Date code  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
- 12a  
- 12a  
- 10.4b, c  
- 8.3b, c  
- 30  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
- 12a  
- 2.9b, c  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
19  
12  
Maximum Power Dissipation  
PD  
W
3.5b, c  
2.2b, c  
- 55 to 150  
260  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 5 s  
28  
36  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
Steady State  
5.3  
6.5  
Notes:  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 80 °C/W.  
Document Number: 62644  
S13-1993-Rev. B, 23-Sep-13  
For technical questions, contact: pmostechsupport@vishay.com  
This document is subject to change without notice.  
www.vishay.com  
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIA449DJ相关器件

型号 品牌 获取价格 描述 数据表
SIA450DJ-T1-E3 VISHAY

获取价格

N-CHANNEL 240-V (D-S) MOSFET
SIA450DJ-T1-GE3 VISHAY

获取价格

暂无描述
SIA453EDJ-T1-GE3 VISHAY

获取价格

MOSFET P-CH 30V 24A PPAK SC-70-6
SiA456DJ VISHAY

获取价格

N-Channel 200 V (D-S) MOSFET
SiA459EDJ VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SiA461DJ VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SiA462DJ VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiA466EDJ VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
SIA467EDJ VISHAY

获取价格

P-Channel 12 V (D-S) MOSFET
SIA468DJ VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET