Datasheet > SiA469DJ

SiA469DJ

更新时间： 2024-11-07 14:53:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	275K
描述
P-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA469DJ 数据手册

SiA469DJ

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®SC-70-6L Single

• TrenchFET^®Gen III p-channel power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

• 100% R_gtested

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load switch

Top View

Bottom View

• DC/DC converters

PRODUCT SUMMARY

V_DS(V)

• High speed switching

-30

0.0265

0.0400

-12

Single

• Power management

battery-operated, mobile and

wearable devices

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

_D(A) ^a

Configuration

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK SC-70

SiA469DJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

-12 ^a

T_C= 70 °C

T_A=25 °C

T_A= 70 °C

-12 ^a

Continuous drain current (T_J= 150 °C)

I_D

-8.8 ^{b, c}

-7 ^{b, c}

-40

-12 ^a

-2.7 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 70 °C

_C= 25 °C

_C= 70 °C

15.6

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.3 ^{b, c}

2.1 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

°C/W

Maximum junction-to-case (drain)

Notes

R_thJC

6.5

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

S16-2441Rev. A, 05-Dec-16

Document Number: 75354

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiA469DJ相关器件

型号	品牌	获取价格	描述	数据表
SiA471DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA477EDJT	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SiA483ADJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA483DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA485DJ	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SIA511DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA511DJ-T1-E3	VISHAY	获取价格	Transistor
SIA511DJ-T1-GE3	VISHAY	获取价格	MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-E3	VISHAY	获取价格	Transistor
SIA517DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET

与SiA469DJ相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA469DJ

SiA469DJ 数据手册

与SiA469DJ相关器件

与SiA469DJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA469DJ

SiA469DJ 数据手册

与SiA469DJ相关器件

与SiA469DJ相关文章

您还可以找

您在本页遇到什么问题？