Datasheet > SiA483ADJ

SiA483ADJ

更新时间： 2024-11-10 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	269K
描述
P-Channel 30 V (D-S) MOSFET

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SiA483ADJ 数据手册

SiA483ADJ

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV p-channel power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

PowerPAK^®SC-70-6L Single

• Provides excellent R_DS-Q_gFigure-of-Merit (FOM)

for switching applications

• 100 % R_gtested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Battery charging and management

• Load switch

Marking code: KA

PRODUCT SUMMARY

V_DS(V)

• DC/DC converters

-30

0.020

0.033

8.3

• Power management in battery-operated,

mobile and wearable devices

R_DS(on)max. () at V_GS= -10 V

R_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

P-Channel

MOSFET

_D(A) ^f

-12

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA483ADJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

-20 / +16

-12 ^f

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A=25 °C

T_A= 70 °C

-12 ^f

Continuous drain current (T_J= 150 °C)

I_D

-10.6 ^{a, b}

-8.5 ^{a, b}

-60

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-12 ^f

-2.9 ^{a, b}

17.9

11.4

3.4 ^{a, b}

2.2 ^{a, b}

-55 to +150

260

Continuous source-drain diode current

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{c, d}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{a, e}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

°C/W

Maximum junction-to-case (drain)

Notes

R_thJC

5.5

a. Surface mounted on 1" x 1" FR4 board

b. t = 5 s

c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

e. Maximum under steady state conditions is 80 °C/W

f. Package limited

S19-0391-Rev. A, 29-Apr-2019

Document Number: 77080

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiA483ADJ相关器件

型号	品牌	获取价格	描述	数据表
SIA483DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA485DJ	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SIA511DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA511DJ-T1-E3	VISHAY	获取价格	Transistor
SIA511DJ-T1-GE3	VISHAY	获取价格	MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-E3	VISHAY	获取价格	Transistor
SIA517DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA517DJ-T1-GE3	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA519EDJ	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SIA519EDJ-T1-GE3	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET

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