Datasheet > SIA533EDJ

SIA533EDJ

更新时间： 2024-11-06 12:20:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	278K
描述
N- and P-Channel 12-V (D-S) MOSFET

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SIA533EDJ 数据手册

New Product

SiA533EDJ

Vishay Siliconix

N- and P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A) Q_g(Typ.)

Definition

4.5^a

0.034 at V_GS= 4.5 V

0.040 at V_GS= 2.5 V

0.050 at V_GS= 1.8 V

0.070 at V_GS= 1.5 V

0.059 at V_GS= - 4.5 V

0.081at V_GS= - 2.5 V

0.115 at V_GS= - 1.8 V

0.215 at V_GS= - 1.5 V

•

TrenchFET^®Power MOSFETs

Typical ESD Protection: N-Channel 1500 V

P-Channel 1000 V

4.5^a

N-Channel

P-Channel

5.6 nC

•

100 % R_gTested

Compliant to RoHS Directive 2002/95/EC

- 4.5^a

APPLICATIONS

- 12

7.8 nC

•

Load Switch for Portable Devices

- 1.5

•

DC/DC Converters

PowerPAK^®SC-70-6 Dual

D₁

S₂

S₁

G₁

D₁

D₂

G₁

Marking Code

D₁

G₂

D₂

E H X

X X X

G₂

Part # code

2.05 mm

S₂

Lot Traceability

and Date code

D₂

S₁

N-Channel MOSFET

Ordering Information: SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

V_DS

- 12

Drain-Source Voltage

Gate-Source Voltage

V_GS

4.5^a

- 4.5^a

- 4.5^{a, b, c}

- 3.7^{b, c}

- 15

- 4.5^a

- 1.6^{b, c}

7.8

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

4.5^{a, b, c}

I_DM

I_S

Pulsed Drain Current

4.5^a

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

Source Drain Current Diode Current

1.6^{b, c}

7.8

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

1.9^{b, c}

1.2^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

Document Number: 65706

S10-0214-Rev. A, 25-Jan-10

www.vishay.com

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