Datasheet > SIA911EDJ

SIA911EDJ

更新时间： 2024-09-28 01:16:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	122K
描述
Dual P-Channel 20-V (D-S) MOSFET

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SIA911EDJ 数据手册

SiA911EDJ

Vishay Siliconix

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

- 4.5^a

- 2

•

0.101 at V_GS= - 4.5 V

0.141 at V_GS= - 2.5 V

0.192 at V_GS= - 1.8 V

New Thermally Enhanced PowerPAK^®

SC-70 Package

- 20

4.9 nC

- Small Footprint Area

- Low On-Resistance

•

Typical ESD Protection 4000 V

APPLICATIONS

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

S₁

S₂

PowerPAK SC-70-6 Dual

Marking Code

S₁

D H X

X X X

G₁

G₂

Part # code

D₁

600 Ω

D₂

Lot Traceability

and Date code

D₁

D₂

G₂

2.05 mm

Ordering Information:

D₁

P-Channel MOSFET

D₂

2.05 mm

S₂

P-Channel MOSFET

SiA911EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 4.5^a

T_C= 25 °C

_C= 70 °C

- 4.5^a

Continuous Drain Current (T_J= 150 °C)

I_D

- 3.6^{b, c}

- 2.9^{b, c}

- 10

- 4.5^a

- 1.6^{b, c}

7.8

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

_C= 25 °C

T_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

R_thJC

12.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Document Number: 68927

S09-0389-Rev. B, 09-Mar-09

www.vishay.com

12 3 4 5 6 7

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与SIA911EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA911EDJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SIA912DJ-T1-GE3	VISHAY	获取价格	MOSFET N-CH DL 12V PWRPAK SC70-6
SIA913AD	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SIA913ADJ	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SIA913ADJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 4300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HELOGEN FREE AND
SIA913DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.07ohm, 2-Element, P-Channel, Silicon, Met
SIA914ADJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SIA914DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Me
SIA914DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
SIA915DJ-T1-GE3	VISHAY	获取价格	SiA915DJ Dual P-Channel 30 V (D-S) MOSFET

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