Datasheet > SiA923AEDJ

SiA923AEDJ

更新时间： 2024-09-28 14:53:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	204K
描述
Dual P-Channel 20 V (D-S) MOSFET

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SiA923AEDJ 数据手册

SiA923AEDJ

Vishay Siliconix

www.vishay.com

Dual P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() MAX.

0.054 at V_GS= -4.5 V

0.070 at V_GS= -2.5 V

0.104 at V_GS= -1.8 V

0.165 at V_GS= -1.5 V

I_D(A)

-4.5 ^a

-1.5

Q_g(TYP.)

• Thermally Enhanced PowerPAK^®SC-70 Package

- Small Footprint Area

- Low On-Resistance

• Typical ESD Protection: 2500 V

• 100 % R_gTested

-20

9.5 nC

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PowerPAK^®SC-70-6L Dual

D₁

G₂

APPLICATIONS

• Charger Switches and Load Switches for Portable Devices

S₂

D₁

• DC/DC Converters

D₂

S₁

S₂

S₁

D₂

G₁

G₂

Top View

Bottom View

Marking Code: DP

Ordering Information:

SiA923AEDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

D₁

D₂

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

-20

V_GS

_C= 25 °C

-4.5 ^a

-4.5 ^a,b,c

-15

-4.5 ^a

-1.6 ^b,c

7.8

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

1.9 ^b,c

1.2 ^b,c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^d,e

T_J, T_stg

-55 to 150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^b,f

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  5 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

12.5

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

S13-2636-Rev. A, 30-Dec-13

Document Number: 62936

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiA923AEDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA923AEDJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
SIA923EDJ	VISHAY	获取价格	Dual P-Channel 20 V (D-S) MOSFET
SIA923EDJ-T1-GE3	VISHAY	获取价格	VISSIA923EDJ-T1-GE3 DUAL P-CHANNEL 20 V
SiA928DJ	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SIA929DJ	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SIA929DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SiA931DJ	VISHAY	获取价格	Dual P-Channel 30 V (D-S) MOSFET
SiA938DJT	VISHAY	获取价格	Dual N-Channel 20 V (D-S) MOSFET
SIA950DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
SIA975DJ	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET

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