Datasheet > SiA931DJ

SiA931DJ

更新时间： 2024-09-28 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	359K
描述
Dual P-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA931DJ 数据手册

SiA931DJ

Vishay Siliconix

www.vishay.com

Dual P-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®SC-70-6L Dual

• TrenchFET^®Gen III power MOSFET

D₁

G₂

• Thermally enhanced PowerPAK^®

SC-70 package

S₂

- Small footprint area

- Low on-resistance

D₁

D₂

• 100 % R_gtested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

S₁

G₁

Top View

D₂

APPLICATIONS

Bottom View

• Smart phones, tablet PCs, mobile computing:

- Battery switches

Marking code: DO

- Load switches

PRODUCT SUMMARY

V_DS(V)

- Power management

- DC/DC converters

-30

0.065

0.080

0.100

4.1

R_DS(on)max. () at V_GS= -10 V

R_DS(on)max. () at V_GS= -6 V

R_DS(on)max. () at V_GS= -4.5 V

Q_gtyp. (nC)

_D(A) ^a

Configuration

-4.5

P-Channel MOSFET

Dual

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK SC-70

SiA931DJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-4.5 ^a

-4.3 ^{b, c}

-3.4 ^{b, c}

-28

-4.5 ^a

-1.6 ^{b, c}

7.8

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

1.9 ^{b, c}

1.2 ^{b, c}

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

12.5

°C/W

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 110 °C/W

S13-1163-Rev. A, 13-May-13

Document Number: 62859

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiA931DJ相关器件

型号	品牌	获取价格	描述	数据表
SiA938DJT	VISHAY	获取价格	Dual N-Channel 20 V (D-S) MOSFET
SIA950DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
SIA975DJ	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SIA975DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SiAA00DJ	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiAA02DJ	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SiAA40DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIB-102-02-FM-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
SIB-102-02-F-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Surface Mount
SIB-102-02-F-S-LC	SAMTEC	获取价格	.100 SINGLE INTERFACE BEAM ASSEM

与SiA931DJ相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

14
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

17
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

26

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA931DJ

SiA931DJ 数据手册

与SiA931DJ相关器件

与SiA931DJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA931DJ

SiA931DJ 数据手册

与SiA931DJ相关器件

与SiA931DJ相关文章

您还可以找

您在本页遇到什么问题？