Datasheet > SiA938DJT

SiA938DJT

更新时间： 2024-11-03 14:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	312K
描述
Dual N-Channel 20 V (D-S) MOSFET

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SiA938DJT

Vishay Siliconix

www.vishay.com

Dual N-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SC-70-6L Dual

D₁

G₂

S₂

• Very low R_DS(on)and excellent R_DSx Q_g

Figure-of-Merit (FOM) in an ultra compact

package footprint

D₁

D₂

• Compact and thermally enhanced package

• Provides exceptional versatility for power management

design

S₁

D₂

G₁

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

Marking code: A7

APPLICATIONS

D₁

D₂

• Synchronous rectification

• Half-bridge power stage

• DC/DC converters

• Battery management

• Load switch

PRODUCT SUMMARY

V_DS(V)

0.0215

0.0245

0.048

3.5

R_DS(on)max. (Ω) at V_GS= 10 V

R_DS(on)max. (Ω) at V_GS= 4.5 V

R_DS(on)max. (Ω) at V_GS= 2.5 V

Q_gtyp. (nC)

G₂

G₁

S₁

N-Channel MOSFET

S₂

N-Channel MOSFET

I_D(A) ^a

4.5

Configuration

Dual

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA938DJT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

+12 / -8

4.5 ^a

UNIT

V_DS

V_GS

_C= 25 °C

_C= 70 °C

4.5 ^a

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

4.5 ^{a, b, c}

4.5 ^a

1.6 ^{b, c}

7.8

1.9 ^{b, c}

1.2 ^{b, c}

-55 to +150

260

Pulsed drain current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous source-drain diode current

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

R_thJC

TYPICAL

12.5

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

t ≤ 5 s

Steady state

°C/W

Maximum junction-to-case (drain)

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 110 °C/W

S21-0526-Rev. B, 31-May-2021

Document Number: 77643

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiA938DJT相关器件

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SIA950DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
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SIA975DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
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SiAA40DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIB-102-02-FM-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
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SIB-102-02-F-S-LC	SAMTEC	获取价格	.100 SINGLE INTERFACE BEAM ASSEM
SIB-103-02-FM-S	SAMTEC	获取价格	Card Edge Connector, 3 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal,

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