Datasheet > SIA929DJ-T1-GE3

SIA929DJ-T1-GE3

更新时间： 2024-09-27 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	145K
描述
Dual P-Channel 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIA929DJ-T1-GE3 数据手册

New Product

SiA929DJ

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)() Max.

0.064 at V_GS= - 10 V

0.078 at V_GS= - 4.5 V

0.120 at V_GS= - 2.5 V

I_D(A)

Q_g(Typ.)

Definition

TrenchFET^®Gen III Power MOSFET

Thermally Enhanced PowerPAK^®

SC-70 Package

- 4.5^a

•

- 30

6.6 nC

- Small Footprint Area

- Low On-Resistance

100 % R_gTested

PowerPAK SC-70-6 Dual

•

• Compliant to RoHS Directive 2002/95/EC

S₁

G₁

APPLICATIONS

D₁

D₂

•

Load Switch and Battery Management for Smart Phones,

Tablet PCs and Portable Media Players

Fast Battery Charging

D₁

D₂

G₂

•

2.05 mm

S₂

2.05 mm

Marking Code

D N X

X X X

Part # code

Lot Traceability

and Date Code

Ordering Information:

SiA929DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

V_DS

V_GS

Limit

- 30

Unit

Gate-Source Voltage

- 4.5^a

_C= 25 °C

_C= 70 °C

- 4.5^a

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.3^{b, c}

- 3.4^{b, c}

- 15

- 4.5^a

- 1.6^{b, c}

7.8

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t  5 s

°C/W

Steady State

12.5

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Document Number: 63398

S11-1654-Rev. A, 15-Aug-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SIA929DJ-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SiA931DJ	VISHAY	获取价格	Dual P-Channel 30 V (D-S) MOSFET
SiA938DJT	VISHAY	获取价格	Dual N-Channel 20 V (D-S) MOSFET
SIA950DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
SIA975DJ	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SIA975DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SiAA00DJ	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiAA02DJ	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SiAA40DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIB-102-02-FM-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal
SIB-102-02-F-S	SAMTEC	获取价格	Card Edge Connector, 2 Contact(s), 1 Row(s), Male, Straight, 0.1 inch Pitch, Surface Mount

与SIA929DJ-T1-GE3相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

14
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

17
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

26

产品中心

服务支持

精选活动

关于我们

帮助中心

SIA929DJ-T1-GE3

SIA929DJ-T1-GE3 数据手册

与SIA929DJ-T1-GE3相关器件

与SIA929DJ-T1-GE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIA929DJ-T1-GE3

SIA929DJ-T1-GE3 数据手册

与SIA929DJ-T1-GE3相关器件

与SIA929DJ-T1-GE3相关文章

您还可以找

您在本页遇到什么问题？