Datasheet > SIA923EDJ

SIA923EDJ

更新时间： 2024-11-02 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	120K
描述
Dual P-Channel 20 V (D-S) MOSFET

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SIA923EDJ 数据手册

SiA923EDJ

Vishay Siliconix

Dual P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

- 4.5^a

- 1.5

•

0.054 at V_GS= - 4.5 V

0.070 at V_GS= - 2.5 V

0.104 at V_GS= - 1.8 V

0.165 at V_GS= - 1.5 V

New Thermally Enhanced PowerPAK^®SC-70

Package

- 20

9.5 nC

- Small Footprint Area

- Low On-Resistance

•

Typical ESD Protection: 2500 V

100 % R_gTested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

PowerPAK SC-70-6 Dual

•

Charger Switches and Load Switches for Portable

Devices

S₁

S₂

•

DC/DC Converters

S₁

Marking Code

G₁

D K X

D₁

D₂

Part # code

X X X

D₁

G₁

G₂

D₂

Lot Traceability

and Date code

G₂

2.05 mm

S₂

D₁

D₂

Ordering Information: SiA923EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 4.5^a

_C= 25 °C

- 4.5^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.5^{a, b, c}

- 15

- 4.5^a

- 1.6^{b, c}

7.8

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

T_A= 70 °C

T_J, T_stg

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

°C/W

Steady State

R_thJC

12.5

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 110 °C/W.

Document Number: 66803

S10-1535-Rev. A, 19-Jul-10

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SIA923EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA923EDJ-T1-GE3	VISHAY	获取价格	VISSIA923EDJ-T1-GE3 DUAL P-CHANNEL 20 V
SiA928DJ	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SIA929DJ	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SIA929DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SiA931DJ	VISHAY	获取价格	Dual P-Channel 30 V (D-S) MOSFET
SiA938DJT	VISHAY	获取价格	Dual N-Channel 20 V (D-S) MOSFET
SIA950DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
SIA975DJ	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SIA975DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET
SiAA00DJ	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET

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