5秒后页面跳转
SIA929DJ PDF预览

SIA929DJ

更新时间: 2024-11-21 09:25:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 145K
描述
Dual P-Channel 30-V (D-S) MOSFET

SIA929DJ 数据手册

 浏览型号SIA929DJ的Datasheet PDF文件第2页浏览型号SIA929DJ的Datasheet PDF文件第3页浏览型号SIA929DJ的Datasheet PDF文件第4页浏览型号SIA929DJ的Datasheet PDF文件第5页浏览型号SIA929DJ的Datasheet PDF文件第6页浏览型号SIA929DJ的Datasheet PDF文件第7页 
New Product  
SiA929DJ  
Vishay Siliconix  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) () Max.  
0.064 at VGS = - 10 V  
0.078 at VGS = - 4.5 V  
0.120 at VGS = - 2.5 V  
ID (A)  
Qg (Typ.)  
Definition  
TrenchFET® Gen III Power MOSFET  
Thermally Enhanced PowerPAK®  
SC-70 Package  
- 4.5a  
- 4.5a  
- 4.5a  
- 30  
6.6 nC  
- Small Footprint Area  
- Low On-Resistance  
100 % Rg Tested  
PowerPAK SC-70-6 Dual  
1
Compliant to RoHS Directive 2002/95/EC  
S1  
2
G1  
APPLICATIONS  
3
D1  
D2  
Load Switch and Battery Management for Smart Phones,  
Tablet PCs and Portable Media Players  
Fast Battery Charging  
D1  
6
D2  
G2  
5
2.05 mm  
S2  
2.05 mm  
4
S
1
S
2
Marking Code  
D N X  
X X X  
Part # code  
G
1
G
2
Lot Traceability  
and Date Code  
Ordering Information:  
SiA929DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
D
1
D
2
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
- 30  
12  
Unit  
V
Gate-Source Voltage  
- 4.5a  
T
T
C = 25 °C  
C = 70 °C  
- 4.5a  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 4.3b, c  
- 3.4b, c  
- 15  
- 4.5a  
- 1.6b, c  
7.8  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
5
PD  
Maximum Power Dissipation  
W
1.9b, c  
1.2b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
RthJC  
Typical  
52  
Maximum  
Unit  
t 5 s  
65  
16  
°C/W  
Steady State  
12.5  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 63398  
S11-1654-Rev. A, 15-Aug-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIA929DJ相关器件

型号 品牌 获取价格 描述 数据表
SIA929DJ-T1-GE3 VISHAY

获取价格

Dual P-Channel 30-V (D-S) MOSFET
SiA931DJ VISHAY

获取价格

Dual P-Channel 30 V (D-S) MOSFET
SiA938DJT VISHAY

获取价格

Dual N-Channel 20 V (D-S) MOSFET
SIA950DJ-T1-GE3 VISHAY

获取价格

Trans MOSFET N-CH 190V 0.47A 6-Pin PowerPAK SC-70 T/R
SIA975DJ VISHAY

获取价格

Dual P-Channel 12-V (D-S) MOSFET
SIA975DJ-T1-GE3 VISHAY

获取价格

Dual P-Channel 12-V (D-S) MOSFET
SiAA00DJ VISHAY

获取价格

N-Channel 25 V (D-S) MOSFET
SiAA02DJ VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
SiAA40DJ VISHAY

获取价格

N-Channel 40 V (D-S) MOSFET
SIB-102-02-FM-S SAMTEC

获取价格

Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Right Angle, Surface Mount Terminal