Datasheet > SIA913ADJ

SIA913ADJ

更新时间： 2024-09-28 01:16:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	265K
描述
Dual P-Channel 12-V (D-S) MOSFET

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New Product

SiA913ADJ

Vishay Siliconix

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

TrenchFET^®Power MOSFET

- 4.5^a

0.061 at V_GS= - 4.5 V

0.081 at V_GS= - 2.5 V

0.115 at V_GS= - 1.8 V

New Thermally Enhanced PowerPAK^®

SC-70 Package

- 12

8.2 nC

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

PowerPAK SC-70-6 Dual

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

S₁

Marking Code

G₁

D₁

D I X

D₂

Part # code

D₁

X X X

D₂

Lot Traceability

and Date code

G₂

2.05 mm

S₂

P-Channel MOSFET P-Channel MOSFET

Ordering Information:

SiA913ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 12

Unit

V_GS

- 4.5^a

_C= 25 °C

- 4.5^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.3^{b, c}

- 3.8^{b, c}

- 15

- 4.5^a

- 1.6^{b, c}

6.5

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

°C/W

R_thJC

Steady State

12.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Document Number: 64723

S09-0141-Rev. A, 02-Feb-09

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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与SIA913ADJ相关器件

型号	品牌	获取价格	描述	数据表
SIA913ADJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 4300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HELOGEN FREE AND
SIA913DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.07ohm, 2-Element, P-Channel, Silicon, Met
SIA914ADJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SIA914DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 4.5A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Me
SIA914DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
SIA915DJ-T1-GE3	VISHAY	获取价格	SiA915DJ Dual P-Channel 30 V (D-S) MOSFET
SIA915DJ-T4-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal
SIA917DJ	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA917DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 3.3A I(D), 20V, 0.11ohm, 1-Element, N-Channel and P-Channel
SiA918EDJ	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET

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