Datasheet > SIA921EDJ

SIA921EDJ

更新时间： 2024-09-27 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	124K
描述
Dual P-Channel 20-V (D-S) MOSFET

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SIA921EDJ 数据手册

SiA921EDJ

Vishay Siliconix

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

- 4.5^a

•

0.059 at V_GS= - 4.5 V

0.098 at V_GS= - 2.5 V

New Thermally Enhanced PowerPAK^®SC-70

Package

- 20

4.9 nC

- Small Footprint Area

- Low On-Resistance

•

Typical ESD Protection: 1700 V

High Speed Switching

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch, PA Switch and Battery Switch for Portable

Devices

DC/DC Converters

PowerPAK SC-70-6 Dual

S₁

S₂

•

S₁

Marking Code

G₁

D F X

D₁

D₂

Part # code

X X X

G₁

G₂

D₁

Lot Traceability

and Date code

D₂

G₂

2.05 mm

S₂

D₁

D₂

P-Channel MOSFET

Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 4.5^a

_C= 25 °C

- 4.5^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.5^{a, b, c}

- 3.7^{b, c}

- 15

- 4.5^a

- 1.6^{b, c}

7.8

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

1.2^{b, c}

T_A= 70 °C

T_J, T_stg

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

R_thJC

12.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Document Number: 64734

S09-2310-Rev. B, 02-Nov-09

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SIA921EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA921EDJ-T1-GE3	VISHAY	获取价格	MOSFET DUAL P-CH D-S 20V SC70-6
SIA921EDJ-T4-GE3	VISHAY	获取价格	Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SiA923AEDJ	VISHAY	获取价格	Dual P-Channel 20 V (D-S) MOSFET
SIA923AEDJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
SIA923EDJ	VISHAY	获取价格	Dual P-Channel 20 V (D-S) MOSFET
SIA923EDJ-T1-GE3	VISHAY	获取价格	VISSIA923EDJ-T1-GE3 DUAL P-CHANNEL 20 V
SiA928DJ	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SIA929DJ	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SIA929DJ-T1-GE3	VISHAY	获取价格	Dual P-Channel 30-V (D-S) MOSFET
SiA931DJ	VISHAY	获取价格	Dual P-Channel 30 V (D-S) MOSFET

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