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SIA912DJ-T1-GE3 PDF预览

SIA912DJ-T1-GE3

更新时间: 2024-09-27 21:21:55
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 114K
描述
MOSFET N-CH DL 12V PWRPAK SC70-6

SIA912DJ-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-75包装说明:SMALL OUTLINE, S-PDSO-N6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
外壳连接:DRAIN配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N6元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SIA912DJ-T1-GE3 数据手册

 浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第2页浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第3页浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第4页浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第5页浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第6页浏览型号SIA912DJ-T1-GE3的Datasheet PDF文件第7页 
New Product  
SiA912DJ  
Vishay Siliconix  
Dual N-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
4.5  
TrenchFET® Power MOSFET  
New Thermally Enhaced PowerPAK®  
SC-70 Package  
0.040 at VGS = 4.5 V  
0.048 at VGS = 2.5 V  
0.063 at VGS = 1.8 V  
RoHS  
COMPLIANT  
12  
4.5  
4.5 nC  
- Small Footprint Area  
4.5  
APPLICATIONS  
PowerPAK SC-70-6 Dual  
Load Switch for Portable Applications  
1
S1  
D
1
D
2
2
G1  
Marking Code  
3
D1  
D2  
C A X  
D1  
6
D2  
Part # code  
X X X  
G2  
G
1
G
2
Lot Traceability  
and Date code  
5
2.05 mm  
2.05 mm  
S2  
4
S
1
S
2
Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
12  
Unit  
V
8
4.5a  
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
4.5a  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
4.5a, b, c  
4.5a, b, c  
20  
4.5a  
1.6b, c  
6.5  
A
IDM  
IS  
Pulsed Drain Current  
T
C = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
TC = 25 °C  
T
C = 70 °C  
5
PD  
Maximum Power Dissipation  
W
1.9b, c  
TA = 25 °C  
TA = 70 °C  
1.2b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
52  
Maximum  
Unit  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
t 5 s  
Steady State  
65  
16  
°C/W  
12.5  
Notes:  
a. Package limited  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 110 °C/W.  
Document Number: 74953  
S-80436-Rev. B, 03-Mar-08  
www.vishay.com  
1

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