Datasheet > SIA910EDJ

SIA910EDJ

更新时间： 2024-09-27 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	136K
描述
Dual N-Channel 12-V (D-S) MOSFET

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中文翻译

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SIA910EDJ 数据手册

New Product

SiA910EDJ

Vishay Siliconix

Dual N-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

Definition

•

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-70 Package

0.028 at V_GS= 4.5 V

0.033 at V_GS= 2.5 V

0.042 at Vgs = 1.8 V

4.5

6.2 nC

- Small Footprint Area

- Low On-Resistance

•

Typical ESD Protection: 2400 V

100 % R_gTested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

PowerPAK SC-70-6 Dual

•

Load Switch for Portable Applications

High Frequency dc-to-dc Converter

DC/DC Converter

D₂

D₁

S₁

G₁

D₁

D₂

Marking Code

D₁

G₂

D₂

G₁

C F X

X X X

G₂

Part # code

2.05 mm

S₂

Lot Traceability

and Date code

S₂

S₁

Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

4.5^a

_C= 25 °C

4.5^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

4.5^{a, b, c}

I_DM

I_S

Pulsed Drain Current

4.5^a

1.6^{b, c}

7.8

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

Continuous Source-Drain Diode Current

_C= 70 °C

P_D

Maximum Power Dissipation

1.9^{b, c}

T_A= 25 °C

T_A= 70 °C

1.2^{b, c}

- 55 to 150

260

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

12.5

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Document Number: 65535

S09-2267-Rev. A, 02-Nov-09

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SIA910EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA910EDJ-T1-GE3	VISHAY	获取价格	Dual N-Channel 12-V (D-S) MOSFET
SIA911ADJ	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911ADJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 3.2 A, 20 V, 0.116 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE A
SIA911DJ		获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 3.6A I(D), 20V, 0.185ohm, 2-Element, P-Channel, Silicon, Me
SIA911ED	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911EDJ	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911EDJ-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
SIA912DJ-T1-GE3	VISHAY	获取价格	MOSFET N-CH DL 12V PWRPAK SC70-6
SIA913AD	VISHAY	获取价格	Dual P-Channel 12-V (D-S) MOSFET

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