Datasheet > SiA817EDJ

SiA817EDJ

更新时间： 2024-09-28 14:52:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	359K
描述
P-Channel 30 V (D-S) MOSFET with Schottky Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA817EDJ 数据手册

SiA817EDJ

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

• LITTLE FOOT^®plus Schottky power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

- Small footprint area

PowerPAK^®SC-70-6L Dual with Schottky Diode

- Low on-resistance

- Thin 0.75 mm profile

• Typical ESD protection (MOSFET): 1500 V (HBM)

• 100 % R_gtested

Top View

Bottom View

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Marking code: HE

PRODUCT SUMMARY

MOSFET

V_DS(V)

APPLICATIONS

• Portable devices such as

smart phones, tablet PCs,

and mobile computing

- Battery charger switch

- Buck converter

-30

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

0.065

0.080

0.092

0.125

6.6

R_DS(on)max. () at V_GS= -3.7 V

_DS(on)max. () at V_GS= -2.5 V

- Power management

Q_gtyp. (nC)

I_D(A) ^a

SCHOTTKY

-4.5

_KA(V)

0.56

P-Channel MOSFET

V_F(V) at 1 A

I_F(A) ^a

Configuration

Dual plus integrated Schottky

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA817EDJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage (MOSFET)

Reverse voltage (Schottky)

Gate-source voltage (MOSFET)

V_DS

V_KA

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-4.5 ^a

-4.2 ^{b, c}

-3.4 ^{b, c}

-15

-4.5 ^a

-1.6 ^{b, c}

2 ^b

Continuous drain current (T_J= 150 °C) (MOSFET)

Pulsed drain current (MOSFET) (t = 300 μs)

I_D

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

(MOSFET diode conduction)

T_A= 25 °C

Average forward current (Schottky)

Pulsed forward current (Schottky)

I_F

I_FM

T_C= 25 °C

6.5

_C= 70 °C

Maximum power dissipation (MOSFET)

Maximum power dissipation (Schottky)

T_A= 25 °C

T_A= 70 °C

T_C= 25 °C

1.9 ^{b, c}

1.2 ^{b, c}

6.8

4.3

1.6 ^{b, c}

1 ^{b, c}

P_D

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

S13-0196-Rev. A, 28-Jan-13

Document Number: 62820

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...12

中文翻译

下载PDF

与SiA817EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA906EDJ	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SIA906EDJ-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SIA907EDJT	VISHAY	获取价格	Dual P-Channel 20 V (D-S) MOSFET
SIA907EDJT-T1-GE3	VISHAY	获取价格	Dual P-Channel 20 V (D-S) MOSFET
SIA910EDJ	VISHAY	获取价格	Dual N-Channel 12-V (D-S) MOSFET
SIA910EDJ-T1-GE3	VISHAY	获取价格	Dual N-Channel 12-V (D-S) MOSFET
SIA911ADJ	VISHAY	获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911ADJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 3.2 A, 20 V, 0.116 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE A
SIA911DJ		获取价格	Dual P-Channel 20-V (D-S) MOSFET
SIA911DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 3.6A I(D), 20V, 0.185ohm, 2-Element, P-Channel, Silicon, Me

与SiA817EDJ相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

13
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

17
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

26

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA817EDJ

SiA817EDJ 数据手册

与SiA817EDJ相关器件

与SiA817EDJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA817EDJ

SiA817EDJ 数据手册

与SiA817EDJ相关器件

与SiA817EDJ相关文章

您还可以找

您在本页遇到什么问题？