Datasheet > SiA485DJ

SiA485DJ

更新时间： 2024-11-07 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	243K
描述
P-Channel 150 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA485DJ 数据手册

SiA485DJ

Vishay Siliconix

www.vishay.com

P-Channel 150 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

- Small footprint area

- Low on-resistance

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω) MAX.

2.6 at V_GS= -10 V

2.7 at V_GS= -6 V

I_D(A)

-1.6 ^a

Q_g(Typ.)

-150

4.2 nC

PowerPAK^®SC-70-6L Single

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Active clamp switch

• Load switch

Top View

Bottom View

Marking Code: B4

P-Channel MOSFET

Ordering Information:

SiA485DJ-T1-GE3 (Lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

-150

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

-1.6

-1.3

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

-0.7 ^{b, c}

-0.57 ^{b, c}

-2

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

_C= 25 °C

-1.6

-1.6 ^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

Avalanche Current

I_AS

-1.5

L = 0.1 mH

Single Pulse Avalanche Energy

E_AS

0.1

_C= 25 °C

_C= 70 °C

15.6

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

2.9 ^{b, c}

1.8 ^{b, c}

-55 to +150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{b, f}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t ≤ 5 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

Notes

a. T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

S14-2235-Rev. A, 10-Nov-14

Document Number: 62988

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiA485DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA511DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA511DJ-T1-E3	VISHAY	获取价格	Transistor
SIA511DJ-T1-GE3	VISHAY	获取价格	MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-E3	VISHAY	获取价格	Transistor
SIA517DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA517DJ-T1-GE3	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA519EDJ	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SIA519EDJ-T1-GE3	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SiA527DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA533EDJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET

与SiA485DJ相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA485DJ

SiA485DJ 数据手册

与SiA485DJ相关器件

与SiA485DJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA485DJ

SiA485DJ 数据手册

与SiA485DJ相关器件

与SiA485DJ相关文章

您还可以找

您在本页遇到什么问题？