Datasheet > SIA467EDJ

SIA467EDJ

更新时间： 2024-11-06 12:04:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	216K
描述
P-Channel 12 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIA467EDJ 数据手册

New Product

SiA467EDJ

Vishay Siliconix

www.vishay.com

P-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() (Max.)

I_D(A)^a

- 31

- 30

- 26

- 7

Q_g(Typ.)

• Thermally Enhanced PowerPAK^®SC-70 Package

- Small Footprint Area

- Low On-Resistance

• 100 % R_gand UIS Tested

• Typ ESD Protection: 5000 V (HBM)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

0.0130 at V_GS= - 4.5 V

0.0145 at V_GS= - 3.7 V

0.0195 at V_GS= - 2.5 V

0.0400 at V_GS= - 1.8 V

- 12

29 nC

PowerPAK SC-70-6L-Single

APPLICATIONS

• Portable Devices such as Smart Phones,

Tablet PCs and Mobile Computing

- Battery Switch

- Load Switch

- Power Management

Marking Code

2.05 mm

B1 X

Part # code

Ordering Information:

SiA467EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

X X X

Lot Traceability

and Date code

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 12

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

- 31

- 25

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

- 13^{b, c}

- 11^{b, c}

- 60

Pulsed Drain Current (t = 300 μs)

I_DM

I_S

_C= 25 °C

- 16

- 2.9^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

Single Avalanche Current

Single Avalanche Energy

I_AS

- 11

L = 0.1 mH

E_AS

5.8

_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.5^{b, c}

2.2^{b, c}

- 50 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

5.3

6.5

Notes

a. T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

S13-0107-Rev. A, 21-Jan-13

Document Number: 62816

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SIA467EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA468DJ	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiA469DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA471DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA477EDJT	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SiA483ADJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA483DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiA485DJ	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SIA511DJ	VISHAY	获取价格	N- and P-Channel 12-V (D-S) MOSFET
SIA511DJ-T1-E3	VISHAY	获取价格	Transistor
SIA511DJ-T1-GE3	VISHAY	获取价格	MOSFET N/P-CH 12V PWRPAK SC70-6

与SIA467EDJ相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

SIA467EDJ

SIA467EDJ 数据手册

与SIA467EDJ相关器件

与SIA467EDJ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIA467EDJ

SIA467EDJ 数据手册

与SIA467EDJ相关器件

与SIA467EDJ相关文章

您还可以找

您在本页遇到什么问题？