Datasheet > SIA450DJ-T1-GE3

SIA450DJ-T1-GE3

更新时间： 2024-09-16 20:05:35

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SIA450DJ-T1-GE3 数据手册

New Product

SiA450DJ

Vishay Siliconix

N-Channel 240-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

1.52

1.5

Q_g(Typ.)

TrenchFET^®Power MOSFET

2.9 at V_GS= 10 V

2.95 at V_GS= 4.5 V

3.5 at V_GS= 2.5 V

New Thermally Enhanced PowerPAK^®

SC-70 Package

RoHS

240

2.54 nC

COMPLIANT

1.44

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

PowerPAK SC-70-6L-Single

•

Boost Converter for Portable Devices

Marking Code

A D X

X X X

Part # code

Lot Traceability

and Date code

2.05 mm

N-Channel MOSFET

Ordering Information:

SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

240

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

1.52

1.21

0.70^{a, b}

0.56^{a, b}

1.5

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

12.8

2.74^{a, b}

Continuous Source-Drain Diode Current

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

9.8

P_D

Maximum Power Dissipation

3.3^{a, b}

2.1^{a, b}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, e}

t ≤ 5 s

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

Steady State

6.5

8.1

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73603

S-80436-Rev. C, 03-Mar-08

www.vishay.com

12 3 4 5 6 7

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SIA450DJ-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SIA450DJ-T1-E3	VISHAY	类似代替	N-CHANNEL 240-V (D-S) MOSFET

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