5秒后页面跳转
SiA456DJ PDF预览

SiA456DJ

更新时间: 2024-09-17 14:54:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 206K
描述
N-Channel 200 V (D-S) MOSFET

SiA456DJ 数据手册

 浏览型号SiA456DJ的Datasheet PDF文件第2页浏览型号SiA456DJ的Datasheet PDF文件第3页浏览型号SiA456DJ的Datasheet PDF文件第4页浏览型号SiA456DJ的Datasheet PDF文件第5页浏览型号SiA456DJ的Datasheet PDF文件第6页浏览型号SiA456DJ的Datasheet PDF文件第7页 
SiA456DJ  
Vishay Siliconix  
www.vishay.com  
N-Channel 200 V (D-S) MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
• Thermally enhanced PowerPAK® SC-70 package  
PowerPAK® SC-70-6L Single  
D
D
5
6
S
4
- Small footprint area  
- Low on-resistance  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
S
7
1
D
2
D
3
1
Top View  
G
APPLICATIONS  
Bottom View  
D
• Boost converter for portable devices  
Marking code: AG  
PRODUCT SUMMARY  
VDS (V)  
200  
1.38  
1.50  
3.50  
5
RDS(on) max. () at VGS = 4.5 V  
G
R
DS(on) max. () at VGS = 2.5 V  
DS(on) max. () at VGS = 1.8 V  
R
Qg typ. (nC)  
D (A) a  
Configuration  
S
N-Channel MOSFET  
I
2.6  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SC-70  
SiA456DJ-T1-GE3  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
200  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
16  
TC = 25 °C  
C = 70 °C  
2.6  
T
2.1  
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
1.1 b, c  
0.9 b, c  
2
A
Pulsed drain current  
IDM  
IS  
TC = 25 °C  
3.6  
2.9 b, c  
Continuous source-drain diode current  
TA = 25 °C  
T
C = 25 °C  
C = 70 °C  
19  
T
12  
Maximum power dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
3.5 b, c  
2.2 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b, f  
SYMBOL  
TYPICAL  
28  
MAXIMUM  
UNIT  
t 5 s  
Steady state  
RthJA  
RthJC  
36  
°C/W  
Maximum junction-to-case (drain)  
5.3  
6.5  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 5 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 80 °C/W  
S-81952-Rev. B, 25-Aug-08  
Document Number: 68642  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiA456DJ相关器件

型号 品牌 获取价格 描述 数据表
SiA459EDJ VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SiA461DJ VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SiA462DJ VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiA466EDJ VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
SIA467EDJ VISHAY

获取价格

P-Channel 12 V (D-S) MOSFET
SIA468DJ VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiA469DJ VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SiA471DJ VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SiA477EDJT VISHAY

获取价格

P-Channel 12 V (D-S) MOSFET
SiA483ADJ VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET