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SIA443DJ-T1-GE3 PDF预览

SIA443DJ-T1-GE3

更新时间: 2024-09-16 20:06:03
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
7页 110K
描述
Trans MOSFET P-CH 20V 6.7A 6-Pin PowerPAK SC-70 T/R

SIA443DJ-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, S-XDSO-N3
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):6.7 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-XDSO-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):15 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIA443DJ-T1-GE3 数据手册

 浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第2页浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第3页浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第4页浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第5页浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第6页浏览型号SIA443DJ-T1-GE3的Datasheet PDF文件第7页 
New Product  
SiA443DJ  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ)  
TrenchFET® Power MOSFET  
- 9a  
- 9a  
- 9a  
0.045 at VGS = - 4.5 V  
0.063 at VGS = - 2.5 V  
0.088 at VGS = - 1.8 V  
New Thermally Enhanced PowerPAK®  
SC-70 Package  
RoHS  
- 20  
9 nC  
COMPLIANT  
- Small Footprint Area  
- Low On-Resistance  
APPLICATIONS  
PowerPAK SC-70-6L-Single  
Load Switch, PA Switch and Battery Switch for Portable  
Devices  
S
1
Marking Code  
D
2
D
B C X  
X X X  
G
Part # code  
3
G
D
Lot Traceability  
and Date code  
6
S
D
5
2.05 mm  
S
2.05 mm  
4
D
P-Channel MOSFET  
Ordering Information:  
SiA443DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 20  
8
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
- 9a  
T
C = 25 °C  
C = 70 °C  
- 9a  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
- 6.7b, c  
- 5.4b, c  
- 20  
- 9a  
- 2.7b, c  
15  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
9.8  
PD  
Maximum Power Dissipation  
W
3.3b, c  
2.1b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJC  
Typical  
30  
Maximum  
Unit  
Maximum Junction-to-Ambientb, f  
t 5 s  
38  
°C/W  
Maximum Junction-to-Case (Drain)  
Steady State  
6.5  
8.1  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 80 °C/W.  
Document Number: 74474  
S-80435-Rev. B, 03-Mar-08  
www.vishay.com  
1

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