Datasheet > SiA445EDJ

SiA445EDJ

更新时间： 2024-09-17 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	254K
描述
P-Channel 20 V (D-S) MOSFET

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SiA445EDJ 数据手册

SiA445EDJ

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®SC-70-6L Single

• Thermally enhanced PowerPAK SC-70 package

- Small footprint area

- Low on-resistance

• 100 % R_gtested

• Built in ESD protection with Zener diode

• Typical ESD performance: 2000 V

Top View

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Bottom View

Marking code: BQ

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

-20

• Smart phones, tablet PCs,

mobile computing 

- Battery switch

- Charger switch

- Load switch

R_DS(on)max. () at V_GS= -4.5 V

0.0165

0.0185

0.0300

_DS(on)max. () at V_GS= -3.7 V

_DS(on)max. () at V_GS= -2.5 V

Q_gtyp. (nC)

_D(A) ^a

Configuration

-12

P-Channel MOSFET

Single

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA445EDJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

-12 ^a

-11.8 ^{b, c}

-9.5 ^{b, c}

-50

-12 ^a

-2.9 ^{b, c}

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

3.5 ^{b, c}

2.2 ^{b, c}

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

5.3

6.5

°C/W

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70-6L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 80 °C/W

S11-2525-Rev. A, 26-Dec-11

Document Number: 63619

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiA445EDJ相关器件

型号	品牌	获取价格	描述	数据表
SiA445EDJT	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA446DJ	VISHAY	获取价格	N-Channel 150 V (D-S) MOSFET
SIA447DJ	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA447DJ-T1-GE3	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA449DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA450DJ-T1-E3	VISHAY	获取价格	N-CHANNEL 240-V (D-S) MOSFET
SIA450DJ-T1-GE3	VISHAY	获取价格	暂无描述
SIA453EDJ-T1-GE3	VISHAY	获取价格	MOSFET P-CH 30V 24A PPAK SC-70-6
SiA456DJ	VISHAY	获取价格	N-Channel 200 V (D-S) MOSFET
SiA459EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET

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