Datasheet > SIA447DJ

SIA447DJ

更新时间： 2024-11-10 01:15:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	232K
描述
P-Channel 12 V (D-S) MOSFET

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New Product

SiA447DJ

Vishay Siliconix

P-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

Thermally Enhanced PowerPAK^®SC-70 Package

- Small Footprint Area

V_DS(V)

R_DS(on)() (Max.)

0.0135 at V_GS= - 4.5 V

0.0194 at V_GS= - 2.5 V

0.0344 at V_GS= - 1.8 V

0.0710 at V_GS= - 1.5 V

I_D(A)

- 12^a

- 3

Q_g(Typ.)

- Low On-Resistance

100 % R_gTested

Material categorization:

•

- 12

31 nC

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK SC-70-6L-Single

APPLICATIONS

•

Providing low voltage drop in Smart Phones, Tablet PCs,

Mobile Computing:

- Battery Switches

- Battery Management

- Load Switches

Marking Code

2.05 mm

B R X

X X X

Part # code

Ordering Information:

Lot Traceability

SiA447DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)

and Date code

SiA447DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 12

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 12^a

- 12^{a, b, c}

- 10^{b, c}

- 50

- 12^a

- 2.9^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation

P_D

3.5^{b, c}

2.2^{b, c}

- 55 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Symbol

R_thJA

Typical

Maximum

Unit

t  5 s

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

Steady State

5.3

6.5

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

Document Number: 63774

S12-1141-Rev. B, 21-May-12

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与SIA447DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA447DJ-T1-GE3	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA449DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA450DJ-T1-E3	VISHAY	获取价格	N-CHANNEL 240-V (D-S) MOSFET
SIA450DJ-T1-GE3	VISHAY	获取价格	暂无描述
SIA453EDJ-T1-GE3	VISHAY	获取价格	MOSFET P-CH 30V 24A PPAK SC-70-6
SiA456DJ	VISHAY	获取价格	N-Channel 200 V (D-S) MOSFET
SiA459EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA461DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA462DJ	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiA466EDJ	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET

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