Datasheet > SiA446DJ

SiA446DJ

更新时间： 2024-09-17 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	261K
描述
N-Channel 150 V (D-S) MOSFET

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SiA446DJ 数据手册

SiA446DJ

Vishay Siliconix

www.vishay.com

N-Channel 150 V (D-S) MOSFET

FEATURES

• ThunderFET^®technology optimizes balance

of R_DS(on), Q_g, Q_swand Q_oss

PRODUCT SUMMARY

V_DS(V)

R_DS(on)() MAX.

0.177 at V_GS= 10 V

0.185 at V_GS= 7.5 V

0.250 at V_GS= 6 V

I_D(A) ^a

7.7

Q_g(TYP.)

• 100 % R_gand UIS tested

150

7.6

4.3 nC

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK^®SC-70-6L Single

APPLICATIONS

• DC/DC converters / boost converters

• Synchronous rectification

• Power management

• LED backlighting

Top View

Bottom View

Marking Code: AV

N-Channel MOSFET

Ordering Information:

SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

150

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

7.7

6.2

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

3.3 ^{b, c}

2.6 ^{b, c}

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

2.9 ^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

E_AS

2.5

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.5 ^{b, c}

2.2 ^{b, c}

-55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{b, f}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t  5 s

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R_thJC

5.3

6.5

Notes

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

S14-0208-Rev. B, 10-Feb-14

Document Number: 62925

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiA446DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA447DJ	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA447DJ-T1-GE3	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA449DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA450DJ-T1-E3	VISHAY	获取价格	N-CHANNEL 240-V (D-S) MOSFET
SIA450DJ-T1-GE3	VISHAY	获取价格	暂无描述
SIA453EDJ-T1-GE3	VISHAY	获取价格	MOSFET P-CH 30V 24A PPAK SC-70-6
SiA456DJ	VISHAY	获取价格	N-Channel 200 V (D-S) MOSFET
SiA459EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA461DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA462DJ	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET

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