Datasheet > SiA4446DJ

SiA4446DJ

更新时间： 2024-09-17 14:53:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	186K
描述
N-Channel 40 V (D-S) MOSFET

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SiA4446DJ 数据手册

SiA4446DJ

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

PowerPAK^®SC-70-6L Single

• TrenchFET^®Gen IV power MOSFET

• Tuned for the lowest R_DS- Q_ossFOM

•

Thermally enhanced PowerPAK^®SC-70 package

- Small footprint area



• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• DC/DC converters

Marking code: A1

• Synchronous rectification

• Motor drive control

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

• Battery management and

protection

0.0110

0.0150

5.3

_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A)

Configuration

• Load switch

31 ^a

N-Channel MOSFET

Single

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA4446DJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

+20 / -16

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

13 ^{b, c}

10.6 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

17.5

3.2 ^{b, c}

8.5

19.2

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single-pulse avalanche current

Single-pulse avalanche energy

I_AS

E_AS

T_C= 70 °C

12.3

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.5 ^{b, c}

2.2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

t  5 s

Steady state

6.5

°C/W

Maximum junction-to-case (drain)

5.3

Notes

a. T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 80 °C/W

S23-0217-Rev. A, 17-Apr-2023

Document Number: 62235

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiA4446DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA444DJT	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT_11	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiA445EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA445EDJT	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
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SIA447DJ	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA447DJ-T1-GE3	VISHAY	获取价格	P-Channel 12 V (D-S) MOSFET
SIA449DJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA450DJ-T1-E3	VISHAY	获取价格	N-CHANNEL 240-V (D-S) MOSFET

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