Datasheet > SiA441DJ

SiA441DJ

更新时间： 2024-09-17 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1193K
描述
P-Channel 40 V (D-S) MOSFET

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SiA441DJ 数据手册

SiA441DJ

Vishay Siliconix

P-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

•

TrenchFET^®Power MOSFET

- 12^a

0.047 at V_GS= - 10 V

0.065 at V_GS= - 4.5 V

Thermally Enhanced PowerPAK^®

SC-70 Package

- 40

11 nC

- Small Footprint Area

- Low On-Resistance

PowerPAK SC-70-6L-Single

•

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Portable and Consumer Devices

- Load Switch

- DC/DC Converter

- Motor Drive

- High-Side Switch in Half- and Full-Bridge Converters

Marking Code

2.05 mm

B O X

P-Channel MOSFET

Part # code

X X X

Lot Traceability

and Date code

Ordering Information:

SiA441DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 40

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 12^a

_C= 25 °C

- 12^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 6.6^{b, c}

- 5.3^{b, c}

- 30

- 12^a

- 2.9^{b, c}

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

Single Pulse Avalanche Energy

E_AS

8.5

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

3.5^{b, c}

2.2^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

R_thJC

5.3

6.5

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 80 °C/W.

Document Number: 63277

S11-1183-Rev. A, 13-Jun-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiA441DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA443DJ-T1-E3	VISHAY	获取价格	Transistor
SIA443DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 20V 6.7A 6-Pin PowerPAK SC-70 T/R
SiA4446DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIA444DJT	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT_11	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiA445EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA445EDJT	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA446DJ	VISHAY	获取价格	N-Channel 150 V (D-S) MOSFET
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