Datasheet > PSMN1R0-40SSH

PSMN1R0-40SSH

更新时间： 2024-09-16 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	322K
描述
N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 TechnologyProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN1R0-40SSH 数据手册

PSMN1R0-40SSH

N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level

MOSFET in LFPAK88 using NextPowerS3 Technology

1 May 2019

Product data sheet

1. General description

325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET

in LFPAK88 package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology

delivers high efficiency and low spiking performance usually associated with MOSFETs with

an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and

also safe and reliable switching at high load-current.

2. Features and benefits

•

325 Amp continuous current capability

•

LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

Copper-clip and solder die attach for low package inductance and resistance, and high I_D(max)

rating

•

Ideal replacement for D2PAK and 10 x 12 mm leadless package types

Qualified to 175 °C

Meets UL2595 requirements for creepage and clearance

Avalanche rated, 100 % tested

Low Q_G, Q_GDand Q_OSSfor high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

•

Unique “SchottkyPlus” technology for Schottky-like switching performance and low I_DSSleakage

Narrow V_GS(th)rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

•

Brushless DC motor control

Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies

Battery protection

eFuse and load switch

Hotswap / in-rush current management

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

325

375

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

12 3 4 5 6 7...13

中文翻译

下载PDF

与PSMN1R0-40SSH相关器件

型号	品牌	获取价格	描述	数据表
PSMN1R0-40ULD	NEXPERIA	获取价格	N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanc
PSMN1R0-40YLD	NEXPERIA	获取价格	N-channel 40 V, 1.1 mΩ, 280 A logic level MOS
PSMN1R0-40YSH	NEXPERIA	获取价格	N-channel 40 V, 1 mΩ, 290 A standard level MO
PSMN1R1-100CSE	NEXPERIA	获取价格	N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i packageDevelopment
PSMN1R1-25YLC	NXP	获取价格	NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
PSMN1R1-25YLC	NEXPERIA	获取价格	N-channel 25 V 1.15 mΩ logic level MOSFET in
PSMN1R1-25YLC,115	NXP	获取价格	PSMN1R1-25YLC - N-channel 25 V 1.15 mΩ logic
PSMN1R1-30BL,118	NXP	获取价格	N-channel 30 V 1.1 mGäª logic level MOSFET in D2PAK, SOT404 Package, Sta
PSMN1R1-30EL	NXP	获取价格	120A, 30V, 0.0014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, PLASTIC, TO-262, I2PAK-3
PSMN1R1-30EL,127	NXP	获取价格	PSMN1R1-30EL - N-channel 30 V 1.3 mΩ logic le

与PSMN1R0-40SSH相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

PSMN1R0-40SSH

PSMN1R0-40SSH 数据手册

与PSMN1R0-40SSH相关器件

与PSMN1R0-40SSH相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PSMN1R0-40SSH

PSMN1R0-40SSH 数据手册

与PSMN1R0-40SSH相关器件

与PSMN1R0-40SSH相关文章

您还可以找

您在本页遇到什么问题？