Datasheet > PSMN1R1-30BL,118

PSMN1R1-30BL,118

更新时间： 2024-09-16 19:59:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	217K
描述
N-channel 30 V 1.1 mGäª logic level MOSFET in D2PAK, SOT404 Package, Standard Marking, Reel Pack, SMD, 13"

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PSMN1R1-30BL,118 技术参数

是否Rohs认证：	符合	生命周期：	Preview
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

PSMN1R1-30BL,118 数据手册

PSMN1R1-30BL

D2P

N-channel 30 V 1.1 mΩ logic level MOSFET in D2PAK

Rev. 1 — 3 February 2011

Objective data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

High efficiency due to low switching

Suitable for logic level gate drive

and conduction losses

sources

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

120

306

P_tot

T_j

total power

dissipation

T_mb= 25 °C; see Figure 2

junction

-55

175 °C

temperature

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 12

1.1

mΩ

on-state

resistance

V_GS= 10 V; I_D= 25 A;

1.53 1.8

T_j= 100 °C; see Figure 13

12 3 4 5 6 7...15

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