Datasheet > PSMN1R1-50SLH

PSMN1R1-50SLH

更新时间： 2024-09-17 11:13:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	247K
描述
N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technologyDevelopment

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN1R1-50SLH 数据手册

PSMN1R1-50SLH

N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in

LFPAK88 using NextPower-S3 Schottky-Plus technology

8 January 2021

Objective data sheet

1. General description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance industrial applications.

2. Features and benefits

•

280 Amp continuous current capability

•

LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

Copper-clip and solder die attach for low package inductance and resistance, and high I_D(max)

rating

•

Ideal replacement for D2PAK and 10 x 12 mm leadless package types

Qualified to 175 °C

Avalanche rated, 100 % tested

Low Q_G, Q_GDand Q_OSSfor high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

•

Unique “SchottkyPlus” technology for Schottky-like switching performance and low I_DSSleakage

Narrow V_GS(th)rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

•

Brushless DC motor control

Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

Battery protection and Battery Management Systems (BMS)

Load switch

10 cell lithium-ion battery applications (36 V ‒ 42 V)

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

280

375

175

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C

0.97

[tbd]

1.18

[tbd]

mΩ

12 3 4 5 6 7...9

中文翻译

下载PDF

与PSMN1R1-50SLH相关器件

型号	品牌	获取价格	描述	数据表
PSMN1R2-25YL	NXP	获取价格	N-channel 25 V 1.2 mΩ logic level MOSFET in L
PSMN1R2-25YL	NEXPERIA	获取价格	N-channel 25 V 1.2 mΩ logic level MOSFET in L
PSMN1R2-25YLC	NXP	获取价格	100A, 25V, 0.0017ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK-4
PSMN1R2-25YLC	NEXPERIA	获取价格	N-channel 25 V 1.3 mΩ logic level MOSFET in L
PSMN1R2-25YLC,115	NXP	获取价格	PSMN1R2-25YLC - N-channel 25 V 1.3 mΩ logic l
PSMN1R2-25YLD	NEXPERIA	获取价格	N-channel 25 V, 1.2 mΩ, 230 A logic level MOS
PSMN1R2-30YLC	NXP	获取价格	N-channel 30 V 1.25mΩ logic level MOSFET in L
PSMN1R2-30YLC	NEXPERIA	获取价格	N-channel 30 V 1.25mΩ logic level MOSFET in L
PSMN1R2-30YLC,115	NXP	获取价格	PSMN1R2-30YLC - N-channel 30 V 1.25mΩ logic l
PSMN1R2-30YLD	NEXPERIA	获取价格	N-channel 30 V, 1.2 mΩ, 250 A logic level MOS

与PSMN1R1-50SLH相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

PSMN1R1-50SLH

PSMN1R1-50SLH 数据手册

与PSMN1R1-50SLH相关器件

与PSMN1R1-50SLH相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PSMN1R1-50SLH

PSMN1R1-50SLH 数据手册

与PSMN1R1-50SLH相关器件

与PSMN1R1-50SLH相关文章

您还可以找

您在本页遇到什么问题？